MANY MINDEDTSMC starts High-NA EUV high-volume manufacturing in 2030
TSMC plans to begin high-volume manufacturing using High-NA EUV lithography in 2030, initially with 6-inch photomasks. A10 or A11 (1/1.1nm-class) are potential candidates for early adoption, though TSMC has not specified which exact fabrication technology will first use this technology. The shift aims to achieve 8nm single-exposure resolution—significantly better than current 13nm systems—while 12-inch photomask pilot lines are targeted for 2031.
This advancement could enable more affordable advanced semiconductors for consumer electronics by improving manufacturing efficiency at smaller scales. Lower production costs for chips would directly support cheaper access to computing and connectivity technologies, reducing barriers for everyday users. However, the exact timeline for mass production and the impact on cost reductions remain unconfirmed, as TSMC has not finalized which node technology will debut with High-NA EUV. The industry partnership with ASML and Samsung will be critical to scaling this transition without delays.
Source: Tom's Hardware